Intel Corp. and IBM have announced one of the biggest advances in transistors in four decades, based on a layer of hafnium. The latest breakthrough means Intel, IBM and others can proceed with technology roadmaps that call for the next generation ...

Intel Corp. said it has completed the development of its next-generation, 45-nm process technology, scheduled for production in the second half of 2007. ...

At the International Electron Device meeting in San Francisco last week, MIT scientists presented research that revealed a possible silicon-free future for electronics. The team showed that a transistor made of a compound semiconductor called indium ...

An individual ''dopant'' atom has been spied interfering with the flow of electrons through a silicon transistor for the first time. Researchers say the feat could help scientists squeeze more power out of conventional computers and ultimately develop ...

A simple tweak to the way common silicon transistors are made -- adding fluorine implants to the silicon layers using a common ion-implantation manufacturing process -- could allow them to operate at a speed of about 110GHz, using existing silicon ma...